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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK893 description drain current C i d =5a@ t c =25 drain source voltage- : v dss =500v(min) fast switching speed applications high voltage. high speed power switching. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 5 a p tot total dissipation@tc=25 75 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK893 electrical characteristics (t c =25 ) symbol parameter conditions min typ. max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 500 v v gs(th) gate threshold voltage v ds =10v; i d = 1ma 1.5 3.5 v r ds(on) drain-source on-stage resistance v gs = 10v; i d =2.5a 1.3 1.5 i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds =500v; v gs = 0 300 ua tr rise time v gs =10v;i d =2.5a; r l =90 15 30 ns ton turn-on time 30 60 ns tf fall time 15 30 ns toff turn-off time 40 85 ns v sd diode forward voltage i f =5a; v gs =0 2.0 v pdf pdffactory pro www.fineprint.cn |
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